Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …

High-quality crystals commonly exhibit regular morphology features and symmetries related
to their crystal structures. The recognition of morphology features, especially on the shoulder …

A novel casting method was developed to grow β-Ga 2 O 3 bulk single crystals without using
a seed crystal. After separation from the crucible and processing, 2-inch diameter single …

In this study, we propose and investigate a novel sandwich structure composed of Ni x O/SiN
x/Ga 2 O 3 for the purpose of enhancing the forward current density and reducing the on …

Sensitivity and detection limit of X‐ray detectors are crucial for security checks, medical
diagnoses, and industrial inspections. In this study, it is reported that introducing some …

High-quality single crystals of both pure and Sn: β-Ga 2 O 3 single crystals were grown
using the optical floating zone technique and a comprehensive study of its luminescence …

Altering the n-type conductivity and optical properties of ultra-wide bandgap β-Ga 2 O 3 by
impurity doping has been a topic of research interest in the semiconductor field …

In this work, we carried out a comparative study of optical property on unintentionally doped
and Sn-doped β-Ga 2 O 3 crystals by edge-defined film-fed growth (EFG) method with a …

X-ray detection materials and devices have received widespread attention due to their
irreplaceable role in the medical, industrial, and military fields. In this paper, BaTeW2O9 …

To increase the n-type conductivity of single-crystal substrates, the Sn element was
purposefully inserted into β-Ga2O3 crystals as n-type dopants. However, it was found that …