A 5-GHz WLAN RF CMOS power amplifier with a parallel-cascoded configuration and an active feedback linearizer

S Kang, D Baek, S Hong - IEEE Transactions on Microwave …, 2017 - ieeexplore.ieee.org
This paper presents a highly linear cascode power amplifier (PA) for 5-GHz 802.11 ac
(wireless local area network) WLAN applications, which is fabricated with a 0.13-μm …

A highly linear dual-band mixed-mode polar power amplifier in CMOS with an ultra-compact output network

JS Park, S Hu, Y Wang, H Wang - IEEE Journal of Solid-State …, 2016 - ieeexplore.ieee.org
This paper presents a highly linear dual-band mixed-mode polar power amplifier (PA) fully
integrated in a standard 65 nm bulk CMOS process. An ultra-compact single-transformer …

9.4 A 2× 2 WLAN and Bluetooth combo SoC in 28nm CMOS with on-chip WLAN digital power amplifier, integrated 2G/BT SP3T switch and BT pulling cancelation

R Winoto, A Olyaei, M Hajirostam, W Lau… - … Solid-State Circuits …, 2016 - ieeexplore.ieee.org
The 2× 2 wireless LAN (WLAN)+ Bluetooth (BT) combo chip continues to be the most
versatile product category in the wireless connectivity space. It finds usage in a wide range …

A 5.9-GHz fully integrated GaN frontend design with physics-based RF compact model

P Choi, S Goswami, U Radhakrishna… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
This paper presents the design of a fully integrated high-efficiency and high-power RF
frontend for the IEEE 802.11 p standard in GaN HEMT technology. An embedded …

A 1.3 nJ/b IEEE 802.11 ah fully-digital polar transmitter for IoT applications

A Ba, YH Liu, J van den Heuvel… - IEEE Journal of Solid …, 2016 - ieeexplore.ieee.org
A 1.3 nJ/b IEEE 802.11 ah TX for IoT applications is presented. A fully-digital polar
architecture consisting of an all-digital PLL-based frequency modulator and an AM-retiming …

A fully integrated transformer-coupled power detector with 5 GHz RF PA for WLAN 802.11 ac in 40 nm CMOS

B Francois, P Reynaert - IEEE Journal of Solid-State Circuits, 2015 - ieeexplore.ieee.org
This paper introduces a fully integrated direct power detector that monitors both RF current
and RF voltage to detect the RF output power of the on-chip RF PA realized in a standard 40 …

An efficiency-enhanced stacked 2.4-GHz CMOS power amplifier with mode switching scheme for WLAN applications

Y Yin, X Yu, Z Wang, B Chi - IEEE Transactions on Microwave …, 2015 - ieeexplore.ieee.org
A stacked 2.4-GHz CMOS power amplifier (PA) with a mode switching scheme is proposed
to enhance the back-off efficiency for wireless local area network applications. By means of …

A 2× 2 MIMO 802.11 abgn/ac WLAN SoC with integrated T/R switch and on-chip PA delivering VHT80 256QAM 17.5 dBm in 55nm CMOS

TM Chen, WC Chan, CC Lin, JL Hsu… - 2014 IEEE Radio …, 2014 - ieeexplore.ieee.org
This paper describes 2× 2 MIMO 802.11 ac Stage 1 WiFi+ BT combo SoC chip with
integrated dual-band PAs, LNAs, T/R switches, as well as a power management unit. The …

A 2.4 GHz receiver with a current-reused inductor-less noise-canceling balun LNA in 40 nm CMOS

X Liu, J Jin, X Wang, J Zhou - Microelectronics Journal, 2021 - Elsevier
A low power receiver is designed and implemented for 2.4 GHz Industrial-Scientific-Medical
(ISM) band in a 40 nm CMOS process. To obtain good noise and linearity performance at …

A frequency-agile RF frontend architecture for multi-band TDD applications

S Goswami, H Kim, JL Dawson - IEEE Journal of Solid-State …, 2014 - ieeexplore.ieee.org
Emerging wireless standards specify dozens of bands spanning several octaves, which
need to be supported in form-factor and energy constrained mobile devices targeting …