Investigation of SiNx Passivated Dual Field Plate AlGaN/GaN HEMTs on Silicon Carbide and Sapphire Substrates Under Radiation Environment
In this paper an in–depth analysis of SiN passivated AlGaN/GaN HEMTs on sapphire and
SiC substrate for radiation hardened operation has been presented. An exhaustive study …
SiC substrate for radiation hardened operation has been presented. An exhaustive study …
L-shaped Schottky barrier MOSFET for high performance analog and rf applications
This work presents the design and simulation of a novel double-gate L-shaped Schottky
barrier MOSFET (DG-LS-SB-MOSFET). The device uses a low work function metal near …
barrier MOSFET (DG-LS-SB-MOSFET). The device uses a low work function metal near …
Strain Engineering for Highly Scaled MOSFETs
The advent of novel materials for manufacturing and the inherent constraints of nanoscale
devices, which lead to an increase in the unpredictability of device characteristics, pose …
devices, which lead to an increase in the unpredictability of device characteristics, pose …
Study of Power-Delay Improved Logic Circuit using Strained Silicon DG-JLT with Variable Gate Work Function
TR Pokhrel, A Majumder - 2022 IEEE Region 10 Symposium …, 2022 - ieeexplore.ieee.org
This paper presents a study of logic circuit design using Strained Induced Double Gated
Junctionless transistors (SIDG-JLT) with work function engineering (WFE) in sub-20nm node …
Junctionless transistors (SIDG-JLT) with work function engineering (WFE) in sub-20nm node …
Limitation of CMOS Scaling and Effects of Parasitic Elements on the RF Performance
A Kundu - Handbook of Emerging Materials for Semiconductor …, 2024 - Springer
The invention of the transistor marked a pivotal moment in microelectronics, enabling the
development of smaller, more efficient electronic devices. Transistors, particularly MOSFETs …
development of smaller, more efficient electronic devices. Transistors, particularly MOSFETs …
[PDF][PDF] Distinct ρ-based model of silicon N-channel double gate MOSFET
HP Mohammad, HC Hadimani… - Int J Reconfigurable & …, 2022 - academia.edu
In the modern era, the silicon-based semiconductor industry is developing rapidly and
playing a pivotal role in the design of integrated circuits, wireless communication systems …
playing a pivotal role in the design of integrated circuits, wireless communication systems …
RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga2O3 as Dielectric Layer
N Amina, M Zitouni, T Zineeddine - … International Conference on …, 2023 - ieeexplore.ieee.org
In this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high
electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide …
electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide …
Multigate MOS-HEMT
A Kundu, M Kar - HEMT Technology and Applications, 2022 - Springer
Abstract Gallium nitride (GaN) based High-Electron-Mobility Transistors (HEMTs), and in
particular, aluminum gallium nitride (AlGaN)/GaN devices have become a popular choice …
particular, aluminum gallium nitride (AlGaN)/GaN devices have become a popular choice …