Thickness dependence of dielectric properties of TlGaS2 thin films

Z Cicek, S Yakut, D Deger, D Bozoglu… - Materials Science in …, 2023 - Elsevier
Bulk TlGaS 2 single crystals were produced by the Bridgman method. TlGaS 2 thin film
samples were deposited from bulk crystals by the thermal evaporation technique under a …

Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl2In2S3Se Crystals in Near-Infrared Optical Limiting Applications

A Doğan, A Karatay, M Isik, EA Yıldız… - Crystal Growth & …, 2024 - ACS Publications
The present study represents the effect of defect states on the nonlinear absorption and
optical limiting performances of TlInSSe and Tl2In2S3Se single crystals with near-infrared …

MgSnO3 epitaxial thin films for solar-blind photodetection: Fabrication and Properties

X Han, B Zhang, H Zhu, R Chen, Y Le, H Zhou, Y Wang… - Vacuum, 2024 - Elsevier
In alkaline earth stannates, MgSnO 3 has low density, high specific strength and wide
bandgap (∼ 4.0 eV), which is a particularly promising semiconductor material. However, the …

Optimization of the structural and optical properties of ALD grown ZnO thin films for photocatalytic applications: thickness dependence

SS Shenouda, M Saif, E Baradács, B Parditka… - Physica …, 2022 - iopscience.iop.org
Thin films of ZnO with different thicknesses (ranging from 8 to 40 nm) have been prepared by
plasma-enhanced atomic layer deposition. Grazing incidence x-ray diffraction shows the …

The effect of Fe content on the dielectric properties of TlGa (0,999) Fe (0,001) S2 thin films

H Bakran, S Yakut, D Bozoglu, D Deger… - Physica B: Condensed …, 2024 - Elsevier
Abstract 0, 1% iron containing Thallium Gallium Sulfide (TlGaS 2 and TlGa (0,999) Fe
(0,001) S 2) thin films were deposited by thermal evaporation in the thickness range 20–200 …

Energy of Crystal Lattice Thermal Oscillations in TlGaS2 Semiconductor Compound

KМ Guseinova, FA Mammadov… - … Journal of Physics, 2024 - periodicals.karazin.ua
This article presents the results of a study of the temperature dependences of the coefficients
of thermal expansion and isothermal compressibility of the ternary compound TlGaS 2. In the …