Self-trapped excitons (STEs) have attracted tremendous attention due to their intriguing
properties and potential optoelectronic applications. STEs are formed from the lattice …

Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference
from DUV light at ground and low altitude. Therefore, DUV detection has high applications in …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

Abstract We studied Si-doped Ga 2 O 3 photodetectors with a metal-semiconductor-metal
structure that were fabricated using pulsed laser deposition and a post-annealing process …

Killer defects are responsible for leakage current and breakdown in β-gallium oxide (β-Ga 2
O 3) Schottky barrier diodes, which are crucial for power device applications. We have found …

The coupling of Ga 2 O 3 film with Si substrate is in favor of the development of high
integration of Ga 2 O 3-based UV photodetector. However, it is difficult in growing the high …

This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …

Electrodes can be recognized as the bridges between photodetectors (PDs) and outer
measurement circuits. The interfacial electric properties between electrodes and sensitive …

Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer
deposition using O2 plasma as reactant and trimethylgallium as a gallium source. The …

Optimizing the orientation of β-Ga 2 O 3 has emerged as an effective strategy to design high-
performance β-Ga 2 O 3 device, but the orientation growth mechanism and approach have …