2022 review of data-driven plasma science
Data-driven science and technology offer transformative tools and methods to science. This
review article highlights the latest development and progress in the interdisciplinary field of …
review article highlights the latest development and progress in the interdisciplinary field of …
Plasma information-based virtual metrology (PI-VM) and mass production process control
In this paper, we review the development of plasma engineering technology that improves
dramatically the production efficiency of OLED (organic light-emitting diode) displays and …
dramatically the production efficiency of OLED (organic light-emitting diode) displays and …
[HTML][HTML] Plasma heating characterization of the large area inductively coupled plasma etchers with the plasma information for managing the mass production
Meter-scale of the large area inductively coupled plasma etchers with the capacitive power
coupling are widely applied for the mass production of OLED (organic light emitting diode) …
coupling are widely applied for the mass production of OLED (organic light emitting diode) …
Enhancement of the virtual metrology performance for plasma-assisted oxide etching processes by using plasma information (PI) parameters
S Park, S Jeong, Y Jang, S Ryu… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Virtual metrology (VM) model based on plasma information (PI) parameter for C 4 F 8
plasma-assisted oxide etching processes is developed to predict and monitor the process …
plasma-assisted oxide etching processes is developed to predict and monitor the process …
Predictive control of the plasma processes in the OLED display mass production referring to the discontinuity qualifying PI-VM
Metal target dry etching process applied for the organic light emitting diode display
manufacturing is hard to control without the generation of the defect particles. A large …
manufacturing is hard to control without the generation of the defect particles. A large …
Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth
A phenomenology-based virtual metrology (VM) for monitoring SiO 2 etching depth was
proposed by Park (2015). It achieved high prediction accuracy by introducing newly …
proposed by Park (2015). It achieved high prediction accuracy by introducing newly …
Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model
The high-value process strategy in the organic light emitting diode display manufacturing
requires strict etching profile control to obtain the normal performance of the display pixels …
requires strict etching profile control to obtain the normal performance of the display pixels …
Properties of the ionization region in a magnetron plasma at gas-aggregation-source-relevant pressure regime explored using a global model
IB Denysenko, H Kersten, A Vahl - Journal of Physics D: Applied …, 2024 - iopscience.iop.org
A global (volume averaged) model is developed for the ionization region (IR) of a gas
aggregation source (GAS) plasma. The case of using argon gas and a copper target is …
aggregation source (GAS) plasma. The case of using argon gas and a copper target is …
Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM
The production efficiencies of organic light emitting diode (OLED) displays and
semiconductor manufacturing have been dramatically improving with the help of plasma …
semiconductor manufacturing have been dramatically improving with the help of plasma …
Application of PI-VM for management of the metal target plasma etching processes in OLED display manufacturing
Generation of the defect particles during the plasma-assisted metal dry etching process is
induced by the various mechanisms. Most of these mechanisms are caused by the non …
induced by the various mechanisms. Most of these mechanisms are caused by the non …