As a conventional insulating material, boron nitride (BN) has been mainly investigated in the
electronics field. Very recently, with the development of preparation/modification technology …

Bulk amorphous materials have been studied extensively and are widely used, yet their
atomic arrangement remains an open issue. Although they are generally believed to be …

The fast development of synthesis routes and preparation technology of 2D materials has
motivated a rapid growth in the micro‐and nanoelectronic memory devices, which gives rise …

Hybrid two‐dimensional materials consisting of graphene and hexagonal boron nitride (h‐
BN) have drawn significant interest due to their tunable bandgap and electrical properties …

Abstract Lithium–sulfur (Li‐S) batteries have become one of the most promising candidates
as next‐generation batteries, owing to their high specific capacity, low cost, and …

While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an atomically
thin and dangling bond-free insulating layer for next-generation electronics and …

We report the observation of substitutional silicon atoms in single-layer hexagonal boron
nitride (h-BN) using aberration corrected scanning transmission electron microscopy. The …

Abstract Lithium‐sulfur (Li‐S) batteries are one of the most promising high‐energy‐density
storage systems. However, serious capacity attenuation and poor cycling stability induced …

The difficulty of current injection into single-crystalline hexagonal boron nitride (h-BN) has
long hindered the realization of h-BN-based high-performance electronic and optoelectronic …

An in‐depth analysis of physics in 2D materials like transition metal dichalcogenides
requires the measurement of many material properties as a function of Fermi level position …