Ferroelectric switching is unambiguously demonstrated for the first time in a III-V semiconductor based material: Al 1-x Sc x N—A discovery which could help to satisfy the …
Electronically controllable actuators have shrunk to remarkably small dimensions, thanks to recent advances in materials science. Currently, multiple classes of actuators can operate at …
V Rontu, P Sippola, M Broas, G Ross… - Journal of Vacuum …, 2018 - pubs.aip.org
The atomic layer deposition (ALD) of AlN from AlCl 3 was investigated using a thermal process with NH 3 and a plasma-enhanced (PE) ALD process with Ar/NH 3 plasma. The …
This article reports on the first demonstration of a high resolution (~ 1.9 nW/Hz 1/2 measured in 200 Hz bandwidth) and fast (~ 5.3 ms) uncooled Infrared (IR) detector based on a high …
J Zhang, L An, B Zhang, CM Wang, Y Yu - Physica E: Low-dimensional …, 2020 - Elsevier
The outstanding electrical insulativity greatly restricts the applications of hexagonal boron nitride nanosheets (h-BNNSs) in semiconductive or conductive micro and nano …
Ultrathin aluminum nitride (AlN) films are of great interest for integration into nanoelectromechanical systems for actuation and sensing. Given the direct relationship …
R Hikata, K Tsuruta, A Ishikawa… - Japanese Journal of …, 2015 - iopscience.iop.org
By atomistic simulation, we investigate an acoustic wave at THz frequencies in nanoscale thin films of aluminum–nitride piezoelectric material. A mode analysis reveals that the …
In this article, MEMS-based logic gates such as OR, AND, NOT, NOR, and NAND gates with functionalities similar to the electronic digital devices are designed and simulated. The key …
This paper presents a high temperature resolution (994.5 μK/Hz 1/2 in a 50 Hz measurement bandwidth) micro-calorimetric sensor based on a high frequency (134.5 MHz) …