Atom probe tomography (APT) provides three-dimensional compositional mapping with sub-
nanometre resolution. The sensitivity of APT is in the range of parts per million for all …

Over the past two decades, prototype devices for future classical and quantum computing
technologies have been fabricated by using scanning tunneling microscopy and hydrogen …

Two‐dimensional dopant layers (δ‐layers) in semiconductors provide the high‐mobility
electron liquids (2DELs) needed for nanoscale quantum‐electronic devices. Key parameters …

Nanosized Co clusters (of about 3 nm size) were unambiguously identified in Co-doped ZnO
thin films by atom probe tomography. These clusters are directly correlated to the …

In this chapter, we will present a digest of the main materials science aspects of the
controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal …

First‐principles calculations were carried out to study the stability, structural, and electronic
properties of compounds of silicon arsenides (SiAs and SiAs2) and germanium arsenides …

Electrical activation of dopants in semiconductors with high concentration is a significant
requirement in device technology. However, the maximum concentration is actually limited …

The drastic improvement of micromanipulation, microwelding, and ion beam milling in
scanning electron microscopy (SEM) has accompanied the development of atom probe …

We report the featured gated field electron emission devices of Si nano-tips with individually
integrated Si nano-channels and the interpretation of the related physics. A rational …

The non-classical nucleation pathway of coherent precipitates has been computed through
minimisation of the nucleation barrier in the composition (c)–size (R) space to predict the …