In-memory computing with emerging memory devices: Status and outlook

P Mannocci, M Farronato, N Lepri, L Cattaneo… - APL Machine …, 2023 - pubs.aip.org
In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …

Electrochemical metallization memories—fundamentals, applications, prospects

I Valov, R Waser, JR Jameson, MN Kozicki - Nanotechnology, 2011 - iopscience.iop.org
This review focuses on electrochemical metallization memory cells (ECM), highlighting their
advantages as the next generation memories. In a brief introduction, the basic switching …

Spintronic nanodevices for bioinspired computing

J Grollier, D Querlioz, MD Stiles - Proceedings of the IEEE, 2016 - ieeexplore.ieee.org
Bioinspired hardware holds the promise of low-energy, intelligent, and highly adaptable
computing systems. Applications span from automatic classification for big data …

Memristor-based material implication (IMPLY) logic: Design principles and methodologies

S Kvatinsky, G Satat, N Wald… - … Transactions on Very …, 2013 - ieeexplore.ieee.org
Memristors are novel devices, useful as memory at all hierarchies. These devices can also
behave as logic circuits. In this paper, the IMPLY logic gate, a memristor-based logic circuit …

Logic design within memristive memories using memristor-aided loGIC (MAGIC)

N Talati, S Gupta, P Mane… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Realizing logic operations within passive crossbar memory arrays is a promising approach
to enable novel computer architectures, different from conventional von Neumann …

A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view

JY Seok, SJ Song, JH Yoon, KJ Yoon… - Advanced Functional …, 2014 - Wiley Online Library
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

Status and prospects of ZnO-based resistive switching memory devices

FM Simanjuntak, D Panda, KH Wei… - Nanoscale research letters, 2016 - Springer
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

E Linn, R Rosezin, S Tappertzhofen, U Böttger… - …, 2012 - iopscience.iop.org
The realization of logic operations within passive crossbar memory arrays is a promising
approach to expand the fields of application of such architectures. Material implication was …

Plasticity in memristive devices for spiking neural networks

S Saïghi, CG Mayr, T Serrano-Gotarredona… - Frontiers in …, 2015 - frontiersin.org
Memristive devices present a new device technology allowing for the realization of compact
non-volatile memories. Some of them are already in the process of industrialization …

Memristor based computation-in-memory architecture for data-intensive applications

S Hamdioui, L Xie, HA Du Nguyen… - … , Automation & Test …, 2015 - ieeexplore.ieee.org
One of the most critical challenges for today's and future data-intensive and big-data
problems is data storage and analysis. This paper first highlights some challenges of the …