The field of plasmonics has the potential to enable unique applications in the mid-infrared
(IR) wavelength range. However, as is the case regardless of wavelength, the choice of …

The coupling between light and collective oscillations of free carriers at metallic surfaces
and nanostructures is at the origin of one of the main fields of nanophotonics: plasmonics …

The interest in plasmonic technologies surrounds many emergent optoelectronic
applications, such as plasmon lasers, transistors, sensors and information storage. Although …

There are a range of fundamental challenges associated with scaling optoelectronic devices
down to the nano-scale, and the past decades have seen significant research dedicated to …

Highly doped semiconductors are an emerging platform for plasmonic devices. Unlike in
noble metals, the carrier concentration of semiconductors can vary by many orders of …

There has been increasing interest in so-called phononic materials, which can support
surface modes known as surface phonon polaritons, consisting of electromagnetic waves …

We demonstrate mid-infrared dual channel near-perfect absorbers based on full
semiconductor epi-layers theoretically. Strong absorption (> 99.9%) is observed at 25.04 …

We demonstrate electrical modulation of plasmonic interfaces in semiconductor pn++
junctions fabricated from both III–V and Si materials. Junction diodes are grown/fabricated …

Antimony (Sb) heavily-doped germanium (Ge)-on-silicon (Si) epitaxial films are investigated
as mid-infrared (MIR) plasmonic materials. Structural, electrical, and optical properties have …

The mid-infrared (mid-IR) and terahertz (THz) portion of the electromagnetic spectrum (∼ 1–
150 THz, or 2–300 μm) encompasses an astounding array of technologies, applications …