Progress of in situ synchrotron X-ray diffraction studies on the mechanical behavior of materials at small scales
TW Cornelius, O Thomas - Progress in Materials Science, 2018 - Elsevier
In recent years, the mechanical behavior of low-dimensional materials has been attracting
lots of attention triggered both by the ongoing miniaturization and the extraordinary …
lots of attention triggered both by the ongoing miniaturization and the extraordinary …
Lasing in strained germanium microbridges
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
Lasing in Group-IV materials
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …
data communications, particularly short range. It also is being prospected for applications in …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content
A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy… - Applied Physics …, 2017 - pubs.aip.org
GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain
Germanium is a strong candidate as a laser source for silicon photonics. It is widely
accepted that the band structure of germanium can be altered by tensile strain so as to …
accepted that the band structure of germanium can be altered by tensile strain so as to …
Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress
The application of high values of strain to Ge considerably improves its light emission
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …
Strain-induced enhancement of electroluminescence from highly strained germanium light-emitting diodes
The full exploration of Si-based photonic integrated circuits is limited by the lack of an
efficient light source that is compatible with the complementary metal–oxide–semiconductor …
efficient light source that is compatible with the complementary metal–oxide–semiconductor …
Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications
The creation of CMOS compatible light sources is an important step for the realization of
electronic-photonic integrated circuits. An efficient CMOS-compatible light source is …
electronic-photonic integrated circuits. An efficient CMOS-compatible light source is …
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
Adding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV semiconductor
emitting in the mid-infrared wavelength range. Several approaches are currently being …
emitting in the mid-infrared wavelength range. Several approaches are currently being …