Sub-10 nm two-dimensional transistors: Theory and experiment

R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang… - Physics Reports, 2021 - Elsevier
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures

Z Cai, B Liu, X Zou, HM Cheng - Chemical reviews, 2018 - ACS Publications
Two-dimensional (2D) materials have attracted increasing research interest because of the
abundant choice of materials with diverse and tunable electronic, optical, and chemical …

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

X Yang, J Li, R Song, B Zhao, J Tang, L Kong… - Nature …, 2023 - nature.com
Abstract Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have
attracted tremendous interest for transistor applications. However, the fabrication of 2D …

Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

AJ Yang, K Han, K Huang, C Ye, W Wen, R Zhu… - Nature …, 2022 - nature.com
Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Y Wang, JC Kim, RJ Wu, J Martinez, X Song, J Yang… - Nature, 2019 - nature.com
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Two-dimensional transition metal dichalcogenides: interface and defect engineering

Z Hu, Z Wu, C Han, J He, Z Ni, W Chen - Chemical Society Reviews, 2018 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

Recent progress and future prospects of 2D‐based photodetectors

N Huo, G Konstantatos - Advanced Materials, 2018 - Wiley Online Library
Conventional semiconductors such as silicon‐and indium gallium arsenide (InGaAs)‐based
photodetectors have encountered a bottleneck in modern electronics and photonics in terms …

Interface-assisted synthesis of 2D materials: trend and challenges

R Dong, T Zhang, X Feng - Chemical reviews, 2018 - ACS Publications
The discovery of graphene one decade ago has triggered enormous interest in developing
two-dimensional materials (2DMs)—that is 2D allotropes of various elements or compounds …

2D materials and van der Waals heterostructures

KS Novoselov, A Mishchenko, A Carvalho… - Science, 2016 - science.org
BACKGROUND Materials by design is an appealing idea that is very hard to realize in
practice. Combining the best of different ingredients in one ultimate material is a task for …

Van der Waals heterostructures and devices

Y Liu, NO Weiss, X Duan, HC Cheng, Y Huang… - Nature Reviews …, 2016 - nature.com
Two-dimensional layered materials (2DLMs) have been a central focus of materials
research since the discovery of graphene just over a decade ago. Each layer in 2DLMs …