Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces
We investigate the formation of extended defects during molecular-dynamics (MD)
simulations of GaN and InGaN growth on (0001) and (11 20) wurtzite-GaN surfaces. The …
simulations of GaN and InGaN growth on (0001) and (11 20) wurtzite-GaN surfaces. The …
Investigation of photovoltaic properties of single core–shell GaN/InGaN wires
We report the investigation of the photovoltaic properties of core–shell GaN/InGaN wires.
The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN …
The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN …
Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes
Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting
diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are …
diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are …
Polarization enhanced charge transfer: dual-band GaN-based plasmonic photodetector
R Jia, D Zhao, N Gao, D Liu - Scientific Reports, 2017 - nature.com
Here, we report a dual-band plasmonic photodetector based on Ga-polar gallium nitride
(GaN) for highly sensitive detection of UV and green light. We discover that decoration of Au …
(GaN) for highly sensitive detection of UV and green light. We discover that decoration of Au …
GaInN hexagonal nanopyramid-based structures with coaxial multiple-quantum shells for red-light micro-LEDs
S Inaba, W Lu, A Shima, N Fukami, Y Hattori… - Applied Surface …, 2025 - Elsevier
Abstract The core–shell GaInN/GaN multiple-quantum shells (MQSs) grown on (1 1¯ 01)
semipolar plane nanopyramids with a thick n-GaInN were characterized, in terms of …
semipolar plane nanopyramids with a thick n-GaInN were characterized, in terms of …
Near-field investigation of spatial variations of (202 1) InGaN quantum well emission spectra
Scanning near-field optical spectroscopy was applied to semipolar (20 2 1) InGaN/GaN
quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its dependence …
quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its dependence …
Suppressing void defects in long wavelength semipolar (202 1) InGaN quantum wells by growth rate optimization
We report on void defect formation in (20 2 1) semipolar InGaN quantum wells (QWs)
emitting in the green spectral region. Fluorescence and transmission electron microscopy …
emitting in the green spectral region. Fluorescence and transmission electron microscopy …
Bright-field imaging of compound semiconductors using aberration-corrected scanning transmission electron microscopy
This study reports the observation of six different zincblende compound semiconductors in
[110] projection using large-collection-angle bright-field (LABF) imaging with an aberration …
[110] projection using large-collection-angle bright-field (LABF) imaging with an aberration …
Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates
We studied the emissive pits in InGaN films grown on compressive and strain-free GaN
underlying layers. Pit density decreased with the full width at half maximum of ω (0002) of …
underlying layers. Pit density decreased with the full width at half maximum of ω (0002) of …