The Earth's gravity field and upper atmosphere are very important scientific information and
their mechanical models can be obtained by inversion of the satellite precision orbit. It would …

As a result of increased interest in space applications, radiation-aware circuit design has
become a major concern to guarantee the safe operation of electronic systems operating …

As human activities expand into naturally or man‐made radiation‐prone environment, the
need for radiation‐hardened (Rad‐Hard) electronic hardware surges. The state‐of‐the‐art …

The impact of the total ionizing dose (TID) on low leakage electrostatic discharge (ESD)
protection devices fabricated on the 180-nm double silicon on insulator (DSOI) technology is …

This study designed a radiation-hardened (RH) complementary metal oxide semiconductor
(CMOS) logic circuit based on an RH variable-gate (V-gate) n-MOSFET that was resistant to …

This paper proposes a new rad hard layout L style of nmos metal oxide semiconductor field
effect transistor (n-MOSFET), which is evaluated to show that its efficacy at reducing …

In this paper, a bidirectional electrostatic discharge (ESD) protection device based on HV
CMOS SOI technology was designed for space applications in a radiation environment. Test …

As human activities expand into naturally or man-made radiation-prone environment, the
need for radiation-hardened (Rad-Hard) electronic hardware surged. The state-of-the-art …

본 논문에서는 saddle fin dynamic random access memory (DRAM) 에 대한 total ionizing
dose (TID) 와 displacement defect (DD) 영향을 Technology Computer-Aided Design (TCAD) …

Base on Carrier transport mechanism of strained Si Nano N-type metal oxide semiconductor
field-effect transistor (NMOSFET) under γ-ray irradiation conditions, which revealed the …