The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …

Herein, the fabrication of a lead-free cesium germanium halide perovskite produced via a
simple solvothermal process is reported for the first time. By tuning the composition of the …

GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this
work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2 …

GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source
offering a number of design options from bulk to heterostructures and quantum wells. Here …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

The development of non-equilibrium group IV nanoscale alloys is critical to achieving new
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …

We demonstrate lasing up to 230 K in a GeSn heterostructure micro-disk cavity. The GeSn
16.0% optically active layer was grown on a step-graded GeSn buffer, limiting the density of …

GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …

GeSn alloys are promising candidates for complementary metal‐oxide‐semiconductor‐
compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has …