Beginning with some introductory remarks about aims and scope, historical background and
present state of the art, a brief survey of the technique of sputter depth profiling is given. The …

Atomically precise, δ-doped structures forming electronic devices in Si have been routinely
fabricated in recent years by using depassivation lithography in a scanning tunneling …

Based on a brief review of the well‐established framework of definitions, measurement and
evaluation principles of the depth resolution in sputter profiling for interfaces, delta layers …

This review primarily deals with the compensation of 'matrix effect'in secondary ion mass
spectrometry (SIMS) for direct quantitative analysis of materials using MCs+-SIMS approach …

Following a brief historical background, the concepts and the present state of sputter–depth
profiling for thin–film analysis are outlined. There are two main branches: either the removed …

Quantification of sputter depth profiles is frequently done by fitting the convolution integral
over concentration and depth resolution function to the experimental results. For a thin delta …

Boron incorporation into ultra-thin boron doped epitaxial grown diamond layers of thickness
of 1 to 2 nm was investigated. Time of flight secondary ion mass spectroscopy was used to …

In this work, we used the depth resolution function (DRF) of the secondary ion mass
spectrometry (SIMS) to deconvolve the boron depth profile of nanometer-thin embedded …

The possibilities of quantitative secondary ion mass spectrometry (SIMS) depth profiling of Al
in AlxGa1− xN/AlN/GaN transistor heterostructures are shown. Using a series of test …

The nanometer-range depth resolution of secondary ion mass spectrometry (SIMS) profiles
in diamond was achieved by the determination of the depth resolution function (DRF). The …