Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …
application areas of power electronics. During the last decade, SiC power transistors were …
Changes and challenges of photovoltaic inverter with silicon carbide device
High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
Short-circuit protection circuits for silicon-carbide power transistors
An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
A gate drive with power over fiber-based isolated power supply and comprehensive protection functions for 15-kV SiC MOSFET
This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
Short-circuit evaluation and overcurrent protection for SiC power MOSFETs
AE Awwad, S Dieckerhoff - 2015 17th European Conference …, 2015 - ieeexplore.ieee.org
In this paper, the short-circuit (SC) performance of two different SiC MOSFETs is
experimentally investigated for different input voltages, biasing voltages and case …
experimentally investigated for different input voltages, biasing voltages and case …
Overload and short-circuit protection strategy for voltage source inverter-based UPS
B Wei, A Marzàbal, J Perez, R Pinyol… - … on Power Electronics, 2019 - ieeexplore.ieee.org
In this paper, an overload and short-circuit protection method is proposed for voltage source
inverter-based uninterruptible power supply (UPS) system. In order to achieve high reliability …
inverter-based uninterruptible power supply (UPS) system. In order to achieve high reliability …
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
This paper presents the design process of a 312-kVA three-phase silicon carbide inverter
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
Review of methodologies for evaluating short-circuit robustness and reliability of SiC power MOSFETs
To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
Surge current capability of SiC MOSFETs in AC distribution systems
Whereas short circuit current and time ratings for power converter applications are often
stated by SiC device manufacturers, surge current capability for AC electrical apparatus …
stated by SiC device manufacturers, surge current capability for AC electrical apparatus …
A temperature-dependent analytical model of SiC MOSFET short-circuit behavior considering parasitic parameters
P Xiang, R Hao, X You - … of Emerging and Selected Topics in …, 2021 - ieeexplore.ieee.org
The superior electrical and thermal characteristics of silicon carbide (SiC) MOSFETs bring
major challenges to its short-circuit reliability. To fully understand its short-circuit mechanism …
major challenges to its short-circuit reliability. To fully understand its short-circuit mechanism …