Abstract III–N–V semiconductors are promising materials for use in next-generation
multijunction solar cells because these materials can be lattice matched to substrates such …

A key to the utilization of nitride-arsenides for long wavelength optoelectronic devices is
obtaining low defect materials with long nonradiative lifetimes. Currently, these materials …

The large-scale use of photovoltaics is slowly becoming a reality. Small scale (∼ 10–20 kW)
power systems using Si solar cells now compete with fossil-fueled electric generators for …

III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP,
become metastable if atoms with significantly smaller or larger covalent radius than the …

GaAs: N is an interesting material for many devices due to its unique compositional variation
of band gap. Small amounts of N lead to a strong decrease in band gap energy as well as …

This paper summarises results of the epitaxial growth of Ga (NAsBi) by metal–organic
vapour phase epitaxy (MOVPE) and the subsequent optical and structural characterisations …

We have achieved 160 A/cm 2 threshold current density of a 1.21 μm InGaAs/GaAs quantum
well (QW) laser grown under a very low As/III ratio. We investigated the As/III ratio …

The first success with the growth of III/V semiconductor materials by OMVPE dates back to
the mid-1950s. Today, it is the largest volume technique for the production of III/V photonic …

Two nitrogen precursors (NF3 and u-dimethylhydrazine) and two gallium precursors
(trimethylgallium and triethylgallium) are explored for the growth of GaAs1− xNx by metal …

High-efficiency, radiation-tolerant solar cell technology is essential for numerous space
applications. To discover new approaches to such potential solutions to the challenges of …