Potential applications of bulk GaN and AlN crystals have made possible single and
multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005 …

Highly‐polarizable materials are favorable for photoelectric conversion due to their efficient
charge separation, while precise design of them is still a big challenge. Herein a novel polar …

We investigated the effects of chemical/substitutional doping, hydrogenation, and anti-site
and vacancy defects on the atomic, optoelectronic and magnetic properties of AlN and GaN …

Recently, two-dimensional (2D) group-III nitride semiconductors such as h-BN, h-AlN, h-
GaN, and h-InN have attracted attention because of their exceptional electronic, optical, and …

We investigate the electronic band structure of graphene on a series of two-dimensional
hexagonal nitride insulators h XN, X= B, Al, and Ga, with first-principles calculations. A …

Further to planar single-layer hexagonal structures, GaN and AlN can also form free-
standing, single-layer structures constructed from squares and octagons. We performed an …

In this study, the adsorption of noxious gas molecules (NO, Cl2, and O3) on GaN and Au-
decorated GaN was systematically scrutinized, and the adsorption energy, bond length …

Materials with a negative thermal expansion coefficient have diverse potential applications
in electronic engineering. For instance, mixing two materials with negative and positive …

Acquiring AlN/GaN digital alloys with matching coherent lattices, atomically sharp interfaces,
and negligible compositional fluctuations remains a challenge. In this work, the nature and …

Point defect introduction is an important method for inducing robust unconventional
magnetic behaviors. Here, we studied the effects of atomic vacancies, including Ga (V Ga) …