Directed self-assembly of block copolymers for the fabrication of functional devices

C Pinto-Gómez, F Pérez-Murano, J Bausells… - Polymers, 2020 - mdpi.com
Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that
has attracted high interest in recent years due to its inherent simplicity, high throughput, low …

Al2O3 Dot and Antidot Array Synthesis in Hexagonally Packed Poly(styrene-block-methyl methacrylate) Nanometer-Thick Films for Nanostructure Fabrication

G Seguini, A Motta, M Bigatti, FE Caligiore… - ACS Applied Nano …, 2022 - ACS Publications
Nanostructured organic templates originating from self-assembled block copolymers (BCPs)
can be converted into inorganic nanostructures by sequential infiltration synthesis (SIS). This …

A compact model based on Bardeen's transfer Hamiltonian formalism for silicon single electron transistors

FJ Klüpfel - IEEE Access, 2019 - ieeexplore.ieee.org
Presented is a physics-based compact model for a silicon-nanopillar single-electron
transistor (SET). Tunneling currents are calculated using a master equation approach with …

Integration of vertical Single Electron Transistor into CMOS technology

M Cejudo - 2021 - ddd.uab.cat
Aquesta tesi presenta les investigacions realitzades cap a la integració de transistors
verticals d'un sol electró (SET) en tecnologia metall-òxid-semiconductor complementari …

[PDF][PDF] Formation of Si Nanocrystals for Single Electron Transistors by Ion Beam Mixing and Self-Organization–Modeling and Simulation

T Prüfer - 2019 - core.ac.uk
The replacement of the conventional field effect transistor (FET) by single electron transistors
(SET) would lead to high energy savings and to devices with significantly longer battery life …