Effect of phosphorus-doping on electrochemical performance of silicon negative electrodes in lithium-ion batteries
The effect of phosphorus (P)-doping on the electrochemical performance of Si negative
electrodes in lithium-ion batteries was investigated. Field-emission scanning electron …
electrodes in lithium-ion batteries was investigated. Field-emission scanning electron …
Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy
Z Yang, X Wang, W Chen, H Tang… - Laser & Photonics …, 2024 - Wiley Online Library
In the rapidly evolving era of information and intelligence, microelectronic devices are
pivotal across various fields, such as mobile devices, big data computing, electric vehicles …
pivotal across various fields, such as mobile devices, big data computing, electric vehicles …
On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon
DM Zhigunov, GN Kamaev, PK Kashkarov… - Applied Physics …, 2018 - pubs.aip.org
In this letter, we report on accurate comparative measurements of Raman scattering from
bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their …
bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their …
Measurement of scratch-induced residual stress within SiC grains in ZrB2–SiC composite using micro-Raman spectroscopy
An analytical framework for determination of scratch-induced residual stress within SiC
grains of ZrB2–SiC composite is developed. Using a “secular equation” that relates strain to …
grains of ZrB2–SiC composite is developed. Using a “secular equation” that relates strain to …
Analysis of the deterioration mechanism of Si electrode as a Li-ion battery anode using Raman microspectroscopy
Propylene carbonate (PC) and an ionic liquid consisting of 1-[(2-methoxyethoxy) methyl]-1-
methylpiperidinium (PP1MEM) and bis (trifluoromethanesulfonyl) amide (TFSA) were used …
methylpiperidinium (PP1MEM) and bis (trifluoromethanesulfonyl) amide (TFSA) were used …
In Situ Raman Mapping of Si Island Electrodes and Stress Modeling as a Function of Lithiation and Size
Si is known for cracking and delamination during electrochemical cycling of a battery due to
the large volume change associated with Li insertion and extraction. However, it has been …
the large volume change associated with Li insertion and extraction. However, it has been …
One-step electrodeposited CuInSe2 thin films studied by Raman spectroscopy
O Ramdani, JF Guillemoles, D Lincot, PP Grand… - Thin solid films, 2007 - Elsevier
CuInSe2 thin films one-step electrodeposited under different conditions were studied by
MicroRaman spectroscopy to identify and quantify the individual phases present in the films …
MicroRaman spectroscopy to identify and quantify the individual phases present in the films …
Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films
A thin film of SnS 2 obtained by close-spaced vacuum sublimation was irradiated by an Nd:
YAG laser (λ= 532 nm) using two intensities of laser radiation of 8.5 MW/cm 2 and 11.5 …
YAG laser (λ= 532 nm) using two intensities of laser radiation of 8.5 MW/cm 2 and 11.5 …
5.8‐inch QHD flexible AMOLED display with enhanced bendability of LTPS TFTs
By applying the curve‐type thin film transistor (TFT) with longitudinal strain, TFT parameters
do change little down to the 2R bending. The mobility variation range reduces down to 4 …
do change little down to the 2R bending. The mobility variation range reduces down to 4 …
Characterization and Control of Residual Stress in Plasma-Sprayed Silicon Coatings on SiC/SiC Composites
M Guo, Y Cui, C Wang, J Jiao, X Bi, C Tao - Coatings, 2023 - mdpi.com
In order to reveal the relationship between residual stress in Si layers of SiC/SiC composites
and the different parameters used in their preparation, the residual stress of the coating …
and the different parameters used in their preparation, the residual stress of the coating …