Metamaterials have attracted broad attention owing to their unique versatile micro-and nano-
structures. As a kind of typical metamaterial, photonic crystals (PhCs) are capable of …

This paper focuses on the determination of the bandgap energy bowing parameter of
strained and relaxed InxGa_1− xN layers. Samples are grown by metal organic vapor phase …

This review paper presents an overview of the optical characterization techniques for Indium
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …

We report a comparison of the morphological, structural and optical properties of both InGaN
single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers …

Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN pn junction to
develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from …

We present the design of high-efficiency and flexible InGaN solar cells based on nano-
pyramid absorbers, which allows for high indium incorporation and reduced polarization …

We demonstrate enhanced short circuit current density and power conversion efficiency in
InGaN heterojunction solar cells using a semibulk absorber (multi-layered InGaN/GaN …

The mechanisms of AlGaN device buffer layer growth were studied. Gallium residues in the
reactor chamber may be harmful to the quality of the AlN strain modulation layer, which …

Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double
heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has …

Uniform, dense, single-phase, 150 nm thick indium gallium nitride (InGaN) nanostructure
(nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by …