The present work introduces an in-situ technique to tune the inter-dot coupling between vertically aligned InAs surface and buried quantum dots (SQD and BQD). Here, we utilize …
Here, we propose a different approach for growing strain-coupled In 0.5 Ga 0.5 As quantum dot infrared photodetectors (QDIPs) with varying dot layer periodicity. Strain calculation is …
The size and shape of self-assembled quantum dots (QDs) in the top layer of a strain- coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …
In the present article, we are introducing a novel heterogeneously coupled InAs Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot (QD) heterostructure with …
Y Xiong, X Zhang - Journal of Applied Physics, 2019 - pubs.aip.org
The optical properties of a vertical multilayer stack of semiconductor self-assembled quantum dots (QDs) depend on the coupling status. We present an improved modeling …
In this work, we have demonstrated InAs surface quantum dot (SQD)-based gas sensors. The epitaxial growth of the strain-coupled and uncoupled InAs/GaAs QD heterostructures is …
The mechanism of incorporation of InGaAs capping layer on InAs Quantum dots (QDs) are unclear in most of the literature studies. Various studies suggest vertical strain relaxation to …
Heterogeneously coupled self-assembled InAs QDs are always attractive to study their unique physical properties. Here, we have introduced Stranski-Krastanov (SK) grown …
The interface quality in InAs/GaAs and In0. 5Ga0. 5As/GaAs quantum dot (QD) heterostructures are elucidated through the phonon‐assisted vibrational modes and is found …