A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures

S Choudhary, J Saha, B Tongbram, D Panda… - Journal of Alloys and …, 2020 - Elsevier
In this study, we demonstrate a detailed strain analysis of the heterogeneously coupled
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …

Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots

D Panda, MR Mantri, R Kumar, D Das, R Saha… - Applied Surface …, 2023 - Elsevier
The present work introduces an in-situ technique to tune the inter-dot coupling between
vertically aligned InAs surface and buried quantum dots (SQD and BQD). Here, we utilize …

Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0. 5Ga0. 5As/GaAs quantum dot heterostructures

D Panda, J Saha, D Das, SM Singh, H Rawool… - Journal of Applied …, 2019 - pubs.aip.org
Here, we propose a different approach for growing strain-coupled In 0.5 Ga 0.5 As quantum
dot infrared photodetectors (QDIPs) with varying dot layer periodicity. Strain calculation is …

Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and …

R Gourishetty, D Panda, S Dongre, J Saha… - Journal of …, 2021 - Elsevier
The size and shape of self-assembled quantum dots (QDs) in the top layer of a strain-
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …

Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: toward next generation broadband IR detection

D Das, J Saha, D Panda, B Tongbram… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In the present article, we are introducing a novel heterogeneously coupled InAs
Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot (QD) heterostructure with …

InAs/InP quantum dots stacking: Impact of spacer layer on optical properties

Y Xiong, X Zhang - Journal of Applied Physics, 2019 - pubs.aip.org
The optical properties of a vertical multilayer stack of semiconductor self-assembled
quantum dots (QDs) depend on the coupling status. We present an improved modeling …

Improvement in Performance of InAs Surface Quantum Dot Heterostructure-Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer

MR Mantri, DP Panda, D Punetha… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
In this work, we have demonstrated InAs surface quantum dot (SQD)-based gas sensors.
The epitaxial growth of the strain-coupled and uncoupled InAs/GaAs QD heterostructures is …

A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction

S Dongre, J Saha, D Panda, D Das, S Reddy… - Journal of Crystal …, 2024 - Elsevier
The mechanism of incorporation of InGaAs capping layer on InAs Quantum dots (QDs) are
unclear in most of the literature studies. Various studies suggest vertical strain relaxation to …

Ultrafast electronic spectroscopy on the coupling of Stranski-Krastanov and submonolayer quantum dots for potential application in near infrared light harvesting

A Chatterjee, D Das, J Patwari… - Materials Research …, 2019 - iopscience.iop.org
Heterogeneously coupled self-assembled InAs QDs are always attractive to study their
unique physical properties. Here, we have introduced Stranski-Krastanov (SK) grown …

Enhanced performance of in (Ga) as QD based optoelectronic devices through improved interface quality between QD and matrix material

D Panda, A Chatterjee, J Saha, D Das… - … status solidi (b), 2019 - Wiley Online Library
The interface quality in InAs/GaAs and In0. 5Ga0. 5As/GaAs quantum dot (QD)
heterostructures are elucidated through the phonon‐assisted vibrational modes and is found …