A series of the charge-transfer compounds determined as 1: 1 stochiometric ratio by job
method has been prepared with the interaction of 7, 7, 8, 8-tetracyanoquinodimethane …

Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is
an inevitable step in realizing novel devices based on 2D materials and heterostructures …

The ac conductivity and dielectric properties of amorphous Ga2S3–Ga2Se3 solid solution in
thin film form have been studied in the temperature range from 306 to 403K and in the …

Molecular beam epitaxy (MBE) of InGaSe/2D-GaSe/sapphire hybrid structures has been
reported in this study. We explore that MBE of the InGaSe layer on 2D-GaSe/sapphire …

Our first-principles calculations show that the ordering of stoichiometric cation vacancies in
Ga 2 Se 3 has a large influence on the bandgap, up to 0.55 eV. Therein, the zigzag-line …

Abstract AgGa 0.5 In 0.5 Se 2 thin films were deposited onto a quartz substrate by the
electron-beam technique. For the investigation of the annealing effect on structural, optical …

While many papers report the synthesis of alumino-silicate or oxy-fluoride glass-ceramics,
few deal with chalcogenide glassceramics. Since few years, investigations have …

In this work the results of the thermal oxidation of GaSe thin films in air at different
temperatures are presented. The structural and morphological characteristics of the …

This paper reports the first systematic study of the structural and optical characterization of
Ga3Se4 thin film. Powder X-ray diffractometery analysis revealed that the films are …

One-dimensional (1D) quantum dots of gallium selenide have been obtained by cathodic
electrodeposition onto the tin doped indium oxide (ITO) glass substrates from aqueous …