Positron annihilation in semiconductors: defect studies

R Krause-Rehberg, HS Leipner - 1999 - books.google.com
The subject of this book is the investigation of lattice imperfections in semiconductors by
means of positron annihilation. A comprehensive review is given of the different positron …

[图书][B] Point defects in Semiconductors II: Experimental aspects

J Bourgoin - 2012 - books.google.com
In introductory solid-state physics texts we are introduced to the concept of a perfect
crystalline solid with every atom in its proper place. This is a convenient first step in …

Defect production and lifetime control in electron and γ‐irradiated silicon

SD Brotherton, P Bradley - Journal of Applied Physics, 1982 - pubs.aip.org
A study of the effect of 1‐and 12‐MeV electron and Co60 γ irradiation has been made on
power p‐i‐n diodes and Schottky barrier diodes fabricated on the same starting material. A …

[图书][B] Teilchendetektoren

H Kolanoski, N Wermes - 2016 - Springer
Neue Ideen und Konzepte in der Entwicklung von Teilchendetektoren waren oft
Voraussetzung für wichtige Experimente, die zu Entdeckungen oder zu neuen …

Particle interaction and displacement damage in silicon devices operated in radiation environments

C Leroy, PG Rancoita - Reports on Progress in Physics, 2007 - iopscience.iop.org
Silicon is used in radiation detectors and electronic devices. Nowadays, these devices
achieving submicron technology are parts of integrated circuits of large to very large scale …

[图书][B] Дефекты в кремнии и на его поверхности

К Вавилов - 1990 - libarch.nmu.org.ua
Рассмотрены процессы образования дефектов в кристаллическом кремнии. Дан
анализ микроструктуры дефектов, приведены сведения об энергетическом спектре …

Radiation-induced point-and cluster-related defects with strong impact on damage properties of silicon detectors

I Pintilie, G Lindstroem, A Junkes, E Fretwurst - Nuclear Instruments and …, 2009 - Elsevier
This work focuses on the investigation of radiation-induced defects responsible for the
degradation of silicon detector performance. Comparative studies of the defects induced by …

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

K Gill, G Hall, B MacEvoy - Journal of applied physics, 1997 - pubs.aip.org
High resistivity silicon particle detectors will be used extensively in experiments at the future
CERN Large Hadron Collider. The detectors will be exposed to particle fluences equivalent …

A model for radiation damage effects in carbon-doped crystalline silicon

G Davies, EC Lightowlers, RC Newman… - Semiconductor …, 1987 - iopscience.iop.org
Room-temperature irradiation of silicon with 2 MeV electrons can create many defects that
give rise to optical absorption lines. The authors describe a simple procedure for calculating …

[HTML][HTML] Higher-valent nickel oxides with enhanced two-electron oxygen reduction in advanced electro-Fenton system for organic pollutants degradation

W Zhang, TT Le, D Shin, S Nandy, JW Choi… - Applied Catalysis B …, 2025 - Elsevier
A higher-valent NiO catalyst, enriched with trivalent Ni (Ni 3+) and exposed {111} crystal
facets, was developed to enhance selective two-electron oxygen reduction (2e–ORR) for …