Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

We show that the band gap bowing trends observed in III-V alloys containing dilute
concentrations of Sb or Bi can be explained within the framework of the valence-band …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …

The optical properties of Ga Bi x As 1− x (0.04< x< 0.08) grown by molecular beam epitaxy
have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong …

In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …

The GaBi x As 1− x bismide III-V semiconductor system remains a relatively underexplored
alloy particularly with regards to its detailed electronic band structure. Of particular …

Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …

We present measurements of the electron Hall mobility in n-type GaAs 1− x Bi x epilayers.
We observed no significant degradation in the electron mobility with Bi incorporation in …

Ga N y As 1− x− y Bi x alloys were grown by molecular-beam epitaxy using solid Ga, Bi, and
As sources and nitrogen radicals generated from nitrogen gas in rf plasma. Changing the …