A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling
S Sinha, T Pal - Electrochemical Science Advances, 2022 - Wiley Online Library
The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the
development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This …
development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This …
Sensor applications based on AlGaN/GaN heterostructures
KT Upadhyay, MK Chattopadhyay - Materials Science and Engineering: B, 2021 - Elsevier
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …
albeit new, is well-established material system in the fields of high power, high temperature …
AlGaN/GaN HEMT pH sensor simulation model and its maximum transconductance considerations for improved sensitivity
In this work, AlGaN/GaN high electron mobility transistor (HEMT) pH sensing simulation
model is presented along with the sensitivity analysis to different pH values of an electrolyte …
model is presented along with the sensitivity analysis to different pH values of an electrolyte …
Performance analysis and optimization of asymmetric front and back pi gates with dual material in gallium nitride high electron mobility transistor for nano electronics …
Y Gowthami, B Balaji, K Srinivasa Rao - International Journal of Engineering, 2023 - ije.ir
The impact of aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi
Gate (FG) and Back Pi Gate (BG), Dual Floating material High K dielectric material such as …
Gate (FG) and Back Pi Gate (BG), Dual Floating material High K dielectric material such as …
Status and prospects of heterojunction-based HEMT for next-generation biosensors
N Fauzi, RI Mohd Asri, MF Mohamed Omar, AA Manaf… - Micromachines, 2023 - mdpi.com
High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-
free, real-time, and direct detection. Owing to their unique properties of two-dimensional …
free, real-time, and direct detection. Owing to their unique properties of two-dimensional …
AlGaN/GaN high electron mobility transistor for various sensing applications: a review
AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …
desired for sensing regime applications due to their extraordinary chemical stability, non …
Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions
This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor
This work reports rapid, label-free and specific detection of the HER2 antigen using a
gallium nitride (GaN) high electron mobility transistor (HEMT). Thiol-based chemistry has …
gallium nitride (GaN) high electron mobility transistor (HEMT). Thiol-based chemistry has …
AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation
Herein, we report the design and implementation of planar and circular aluminium gallium
nitride/Gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) designs for pH …
nitride/Gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) designs for pH …
AlGaN/GaN HEMT based biosensor for detection of the HER2 antigen spiked in human serum
This work reports the development of a gallium nitride-based high electronic mobility
transistor (GaN HEMT)-based biosensor to detect human epidermal growth factor receptor-2 …
transistor (GaN HEMT)-based biosensor to detect human epidermal growth factor receptor-2 …