Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Novel phenomena and functionalities at artificial heterointerfaces have been attracting
extensive scientific attention in both materials science and fundamental condensed matter …

Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific
and industrial promise, providing a broad materials platform for scientific investigation, and …

Ferroelectricity in functional materials remains one of the most fascinating areas of modern
science in the past several decades. In the last several years, the rapid development of …

Switchable polarization makes ferroelectrics a critical component in memories, actuators
and electro-optic devices, and potential candidates for nanoelectronics. Although many …

Ferroelectric materials are characterized by a spontaneous polarization, which can be
reoriented with an applied electric field. The switching between polarized domains is …

Reducing the switching energy of ferroelectric thin films remains an important goal in the
pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the …

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance
electromechanical response. Previous studies have shown disagreement regarding the …

Polarization switching in ferroelectric thin films occurs via nucleation and growth of 180°
domains through a highly inhomogeneous process in which the kinetics are largely …

Single‐phase multiferroic materials are of considerable interest for future memory and
sensing applications. Thin films of Aurivillius phase Bi 7 Ti 3 Fe 3 O 21 and Bi 6 Ti 2.8 Fe …