A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
Solution processed metal oxide high‐κ dielectrics for emerging transistors and circuits
The electronic functionalities of metal oxides comprise conductors, semiconductors, and
insulators. Metal oxides have attracted great interest for construction of large‐area …
insulators. Metal oxides have attracted great interest for construction of large‐area …
High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor
G Wang, D Liu, S Fan, Z Li, J Su - Nanotechnology, 2021 - iopscience.iop.org
In this work, high-dielectric-constant (high-k) erbium oxide (Er 2 O 3) film is fabricated using
the spin coating method, and annealed at a series of temperatures (from 400 C to 700 C) …
the spin coating method, and annealed at a series of temperatures (from 400 C to 700 C) …
Sub-volt metal-oxide thin-film transistors enabled by solution-processed high-k Gd-doped HfO2 dielectric films
Metal-oxide high-k dielectric films have received considerable attention in lowering the
driving voltage and power consumption in semiconductor devices. Here, we demonstrate …
driving voltage and power consumption in semiconductor devices. Here, we demonstrate …
Performance improvement of p-channel tin monoxide transistors with a solution-processed zirconium oxide gate dielectric
A Azmi, J Lee, TJ Gim, R Choi… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs)
with a high-permittivityzirconium oxide (ZrO 2) gate insulatorfilm, which were prepared by a …
with a high-permittivityzirconium oxide (ZrO 2) gate insulatorfilm, which were prepared by a …
Thermal effect of annealing-temperature on solution-processed high-k ZrO 2 dielectrics
In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin
coating with varying pre-annealing temperatures and post-annealing temperatures. The …
coating with varying pre-annealing temperatures and post-annealing temperatures. The …
A facile low-cost preparation of high-k ZrO2 dielectric films for superior thin-film transistors
S Wang, G Xia - Ceramics International, 2019 - Elsevier
Herein, we report a facile low-cost approach to high-k ZrO 2 dielectric films and integrated
devices by using lightwave (LW) irradiation induced chloride-based low-temperature …
devices by using lightwave (LW) irradiation induced chloride-based low-temperature …
Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors
M Nam, S Lee, H Jeong, A Yoon… - Advanced Materials …, 2024 - Wiley Online Library
The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–
semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is …
semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is …
Amorphous thin film deposition
V Nazabal, P Němec - Springer Handbook of Glass, 2019 - Springer
This chapter is devoted to the description of available experimental methods which are used
for the fabrication of glassy and amorphous thin films or coatings on glass. Current …
for the fabrication of glassy and amorphous thin films or coatings on glass. Current …
Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator
In this paper, a high-k metal-oxide film (ZrO2) was successfully prepared by a solution-
phase method, and whose physical properties were measured by X-ray diffraction (XRD), X …
phase method, and whose physical properties were measured by X-ray diffraction (XRD), X …