Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC
mosfets) are widely used in higher power density and higher efficiency power electronic …

Diamond is a wide bandgap semiconductor (bandgap: 5.5 eV). However, through impurity
doping, diamond can become a p-type or n-type semiconductor. The minimum resistivity of p …

In this study, unique short-circuit failure mechanisms in 1.2-kV SiC metal-oxide-
semiconductor field-effect transistors (MOSFETs) at 400 and 800-V dc bias were …

Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …

This article focuses on the avalanche energy handing ability and theoretical demonstration
of the avalanche failure mechanism for the SiC MOSFET by the unclamped inductive …

In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …

A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and
numerically analyzed in this paper. The proposed structure features the HJD to effectively …

Due to superior properties of silicon carbide (SiC), the unipolar conduction mechanism of
metal-oxide-semiconductor-field-effect transistor (MOSFET), and the structural feature …

To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …

Gate oxide degradation can reduce the reliability of silicon carbide metal-oxide-
semiconductor field-effect transistor (SiC MOSFET), which is indicated by bias temperature …