Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Herein, a successful elimination of the size‐dependent efficiency decrease in GaN micro‐
light‐emitting diodes (micro‐LEDs) is achieved using damage‐free neutral beam etching …

GaAs/AlGaAs core–shell nanowires, typically having 250 nm diameter and 6 μm length,
were grown on 2-inch Si wafers by the single process of molecular beam epitaxy using …

A nanodisk array of blue InGaN/GaN multiple quantum wells was made using neutral beam
etching (NBE) followed by GaN regrowth. The NBE-fabricated nanodisk presented a vertical …

The impurity-associated optical transitions in a piezoelectric core–shell nanowire were
studied using the density matrix formalism. In the calculations, four electron states were …

We investigated the structural and optical properties of GaAs/Al 0.8 Ga 0.2 As core–shell
nanowires (NWs) grown on a 2-in. Si wafer. The NWs exhibit low reflectance (< 2%) across …

The femtosecond laser-induced periodic surface structure (LIPSS) method has attracted
considerable interest as a way to form fine structures with dimensions below the laser …

We demonstrate persistent high degrees of spin polarization (SPD) up to 70% during light
emission in (In 1− x Ga x) As quantum-dot–well (QD–QW) hybrid nanosystems, where QD …

The adsorption behavior of recombinant cage-shaped proteins with carbon nanotube (CNT)-
binding peptides on carbon surfaces was quantitatively and dynamically analyzed using a …

The neutral beam etching (NBE) technique, which enables damage-free etching of
semiconductor materials, is used to fabricate sub-10-μm InGaN/GaN micro-LEDs to replace …