Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Characterization and application of PVDF and its copolymer films prepared by spin-coating and Langmuir–Blodgett method
Poly (vinylidene fluoride)(PVDF) and its copolymers are key polymers, displaying properties
such as flexibility and electroactive responses, including piezoelectricity, pyroelectricity, and …
such as flexibility and electroactive responses, including piezoelectricity, pyroelectricity, and …
Heterogeneous Integration of Graphene and HfO2 Memristors
U Trstenjak, K Goß, A Gutsche, J Jo… - Advanced Functional …, 2024 - Wiley Online Library
The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for
the heterogeneous integration of various materials for advanced electronics. In this work …
the heterogeneous integration of various materials for advanced electronics. In this work …
Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices
Biological neural networks outperform current computer technology in terms of power
consumption and computing speed while performing associative tasks, such as pattern …
consumption and computing speed while performing associative tasks, such as pattern …
Review on Resistive Switching Devices Based on Multiferroic BiFeO3
This review provides a comprehensive examination of the state-of-the-art research on
resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. By exploring possible …
resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. By exploring possible …
Resistive switching studies in VO2 thin films
The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser
deposition grown thin films on TiO2 substrates, under variation of temperature and applied …
deposition grown thin films on TiO2 substrates, under variation of temperature and applied …
Nanosystems, edge computing, and the next generation computing systems
A Passian, N Imam - Sensors, 2019 - mdpi.com
It is widely recognized that nanoscience and nanotechnology and their subfields, such as
nanophotonics, nanoelectronics, and nanomechanics, have had a tremendous impact on …
nanophotonics, nanoelectronics, and nanomechanics, have had a tremendous impact on …
[HTML][HTML] Effect of electron conduction on the read noise characteristics in ReRAM devices
K Schnieders, C Funck, F Cüppers, S Aussen… - APL Materials, 2022 - pubs.aip.org
The read variability of redox based resistive random access memory is one of the key
characteristics with regard to its application in both data storage and novel computation in …
characteristics with regard to its application in both data storage and novel computation in …
Effective current-driven memory operations for low-power reram applications
Resistive switching (RS) devices are electronic components which exhibit a resistive state
that can be adjusted to different nonvolatile levels via electrical stressing, fueling the …
that can be adjusted to different nonvolatile levels via electrical stressing, fueling the …
Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system
In this work, we have reported the temperature-dependent resistive switching (RS) behavior
observed in (1-x) CuI.(x) La 0.7 Sr 0.3 MnO 3 nanocomposites with 0.001< x< 0.05 within the …
observed in (1-x) CuI.(x) La 0.7 Sr 0.3 MnO 3 nanocomposites with 0.001< x< 0.05 within the …