Demonstration of L-shaped tunnel field-effect transistors
An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT)
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
N+ pocket doped vertical TFET based dielectric-modulated biosensor considering non-ideal hybridization issue: A simulation study
VD Wangkheirakpam, B Bhowmick… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
A comprehensive evaluation of sensitivity between double gate tunnel FET and n+ pocket
doped vertical tunnel FET based label-free biosensors is reported in this work. Both the …
doped vertical tunnel FET based label-free biosensors is reported in this work. Both the …
[HTML][HTML] Recent progress on sensitivity analysis of schottky field effect transistor based biosensors
In this review, we explored the modern development of schottky field effect transistor (SK
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …
N+ pocket-doped vertical TFET for enhanced sensitivity in biosensing applications: modeling and simulation
WV Devi, B Bhowmick… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This article examines the performance of N+ pocket-doped vertical tunnel field-effect
transistor (VTFET)-based label-free biosensors with the help of an analytical model …
transistor (VTFET)-based label-free biosensors with the help of an analytical model …
[HTML][HTML] Recent study on Schottky tunnel field effect transistor for biosensing applications
In this review, we discussed highly sensitive biosensor devices which is having a more
attractive, wide scope and development in the sensing field. Biosensor devices can detect …
attractive, wide scope and development in the sensing field. Biosensor devices can detect …
A novel tunnel FET design with stacked source configuration for average subthreshold swing reduction
C Wu, Q Huang, Y Zhao, J Wang… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average
subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked …
subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked …
[HTML][HTML] Vertical WS2/SnS2 van der Waals Heterostructure for Tunneling Transistors
Van der Waals heterostructures composed of two-dimensional (2D) transition metal
dichalcogenides (TMD) materials have stimulated tremendous research interest in various …
dichalcogenides (TMD) materials have stimulated tremendous research interest in various …
Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure
GH Shin, B Koo, H Park, Y Woo, JE Lee… - ACS applied materials …, 2018 - ACS Publications
We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-
doped silicon and n-type MoS2. The resulting p–n heterojunction shows a staggered band …
doped silicon and n-type MoS2. The resulting p–n heterojunction shows a staggered band …
A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High Ratio
In this letter, a novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and
optimized for the first time, which can effectively suppress the subthreshold slope (SS) …
optimized for the first time, which can effectively suppress the subthreshold slope (SS) …