A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

The formation of supersaturated substitutional alloys by ion implantation and rapid liquid‐
phase‐epitaxial regrowth induced by pulsed laser annealing has been studied using …

The implantation of dopant atoms in semiconductors is in general associated with lattice
damage. The recovery of the crystal disorder is necessary to electrically activate the dopant …

Ion implantation followed by pulsed laser melting is an extensively-studied method for
hyperdoping Si with impurity concentrations that exceed the equilibrium solubility limit by …

The time‐resolved reflectivity at 0.63 μm from arsenic‐implanted silicon crystals has been
measured during annealing by a 1.06‐μm laser pulse of 50‐ns duration. The reflectivity was …

In this revised and expanded edition, the authors provide a comprehensive overview of the
tools, technologies, and physical models needed to understand, build, and analyze …

The physical and electrical properties of ion-implanted silicon annealed with high-powered
laser radiation are described. Particular emphasis is placed on the comparison of materials …

Pulsed laser melting and rapid solidification have attracted interest for decades as a method
to achieve impurity concentrations in silicon orders of magnitude above the equilibrium …

We have discovered that interference effects extant during pulsed laser irradiation annealing
of ion‐implanted silicon produce periodic property variations in the annealed material that …

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared
photodetectors and intermediate band solar cells. Due to the low solid solubility limits of …