Photodetector based on heterostructure of two-dimensional WSe2/In2Se3

B Liu, B Tang, F Lv, Y Zeng, J Liao, S Wang… - …, 2019 - iopscience.iop.org
Heterojunctions formed by two-dimensional (2D) layered semiconducting materials have
been studied extensively in the past few years. These van der Waals (vdW) structures have …

Graphene electrode-enhanced InSe/WSe2 van der Waals heterostructure for high-performance broadband photodetector with imaging capabilities

SH Aleithan, U Younis, Z Alhashem… - Journal of Alloys and …, 2024 - Elsevier
Abstract 2D vdWs heterostructure is realized as a powerful technique for tuning the
optoelectronic properties and thus developing the future generation optoelectronic devices …

Automatic Obstacle Avoidance Trolley System Based on Two-Dimensional ReS2/WSe2 Heterojunction Photodetector

Z Liu, H Liu, M Zhang, L Han, N Huo… - … Applied Materials & …, 2024 - ACS Publications
With the continuous advancement of intelligent vehicle technology, automatic obstacle
avoidance (AOA) has become a crucial component of in-vehicle systems. This study …

Polyvinylalcohol (PVA)-Assisted Exfoliation of ReS2 Nanosheets and the Use of ReS2–PVA Composites for Transparent Memristive Photosynapse Devices

KH Jung, C Yeon, J Yang, YJ Cheon… - … Applied Materials & …, 2021 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant
attention for their outstanding optoelectrical properties. Unlike most TMDs with layer …

Direct synthesis of submillimeter-sized few-layer WS2 and WS0. 3Se1. 7 by mist chemical vapor deposition and its application to complementary mos inverter

A Kuddus, K Yokoyama, H Shirai - Semiconductor Science and …, 2022 - iopscience.iop.org
This study investigated the direct synthesis of submillimeter-sized few-layer tungsten
disulfide (WS 2) and tungsten sulfoselenide (WS 0.3 Se 1.7) using the mist chemical vapor …

Photocatalytic Applications of ReS2-Based Heterostructures

N Wang, Y Li, L Wang, X Yu - Molecules, 2023 - mdpi.com
ReS2-based heterostructures, which involve the coupling of a narrow band-gap
semiconductor ReS2 with other wide band-gap semiconductors, have shown promising …

Thin EOT MoS2 FET for Efficient Photodetection and Gas Sensing

K Thakar, A Varghese, S Dhara… - 2018 4th IEEE …, 2018 - ieeexplore.ieee.org
In this report, we demonstrate photodetection and gas sensing using thin (scaled) effective
oxide thickness (EOT) bottom gate molybdenum disulfide (MoS 2) field-effect transistors …