Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …

Memristive systems offer biomimetic functions that are being actively explored for energy‐
efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D …

Resistance switching in metal oxides could form the basis for next-generation non-volatile
memory. It has been argued that the current in the high-conductivity state of several …

Nanoscale metal/oxide/metal switches have the potential to transform the market for
nonvolatile memory and could lead to novel forms of computing. However, progress has …

This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …

We demonstrate over 1× 10 10 open-loop switching cycles from a simple memristive device
stack of Pt/TaO x/Ta⁠. We compare this system to a similar device stack based on titanium …

Organic‐inorganic halide perovskites (OHPs) have been intensively studied for application
in solar cells with high conversion efficiency exceeding 22%. The unique electrical and …

Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …