In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering …
Abstract In this work, Raised Source gate overlapped negative capacitance tunnelling field effect transistor (NC-TFET) is optimized for the first time to suppress the ambipolarity of TFET …
This paper reports on a comparative study of the analysis of electrical noise of heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T …
In this Article, the effects of lateral straggle parameter variation and Temperature variation have been investigated on Hetero Junction Dual Gate Vertical TFET. Although the TFET is a …
This paper investigates the performance and parametric design of a new foundry-based silicon field-effect transistor (FET) sensing platform known as the open-gate junction field …
MS Narula, A Pandey - Journal of Electronic Materials, 2023 - Springer
Parasitic capacitance in extremely scaled devices is a major issue in device/circuit design. Its contribution to the total device capacitance is very large, especially in nanowire field …
In this article, a Heterogeneous Gate-Dielectric Nanosheet Tunnel Field Effect Transistor (HD-NSH-TFET) with three channels is investigated using the 3-D Visual TCAD simulator …
Abstract Tunnel FETs (TFETs) are a strong contender for replacing conventional MOSFETs in lower power applications due to their low off-state current and sub-threshold swing being …
Herein, a vertical T-shaped heterojunction tunnel field-effect transistor (TFET) structure is proposed. This paper explores the effect of the traps and noise on the electrical …