Based field-effect transistor sensors

KA Bushra, KS Prasad - Talanta, 2022 - Elsevier
The present scenario in the world largely demands affordable, fast, recyclable, and flexible
electronic devices for bio sensing. Varieties of paper-based devices such as microfluidics …

Ge-source based L-shaped tunnel field effect transistor for low power switching application

S Chander, SK Sinha, R Chaudhary, A Singh - Silicon, 2021 - Springer
In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET)
has been analyzed with different engineering techniques such as bandgap engineering …

Impact of fe material thickness on performance of raised source overlapped negative capacitance tunnel field effect transistor (NCTFET)

A Singh, SK Sinha, S Chander - Silicon, 2022 - Springer
Abstract In this work, Raised Source gate overlapped negative capacitance tunnelling field
effect transistor (NC-TFET) is optimized for the first time to suppress the ambipolarity of TFET …

Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors

S Chander, SK Sinha, R Chaudhary… - Semiconductor …, 2022 - iopscience.iop.org
This paper reports on a comparative study of the analysis of electrical noise of
heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T …

Effect of lateral straggle parameter on hetero junction dual gate vertical TFET

K Nasani, B Bhowmick, PD Pukhrambam - Microelectronics Journal, 2023 - Elsevier
In this Article, the effects of lateral straggle parameter variation and Temperature variation
have been investigated on Hetero Junction Dual Gate Vertical TFET. Although the TFET is a …

Performance Analysis of Open-Gate Junction FET: A New Foundry-based Silicon Transistor for Biochemical Sensing Applications

A Panahi, E Ghafar-Zadeh - IEEE Access, 2024 - ieeexplore.ieee.org
This paper investigates the performance and parametric design of a new foundry-based
silicon field-effect transistor (FET) sensing platform known as the open-gate junction field …

Dual-gate silicon nanowire FET with a corner spacer for high-performance and high-frequency applications

MS Narula, A Pandey - Journal of Electronic Materials, 2023 - Springer
Parasitic capacitance in extremely scaled devices is a major issue in device/circuit design.
Its contribution to the total device capacitance is very large, especially in nanowire field …

Design and comparative analysis of heterogeneous gate dielectric nanosheet TFET with temperature variance

G Jain, RS Sawhney, R Kumar, A Saini - Silicon, 2023 - Springer
In this article, a Heterogeneous Gate-Dielectric Nanosheet Tunnel Field Effect Transistor
(HD-NSH-TFET) with three channels is investigated using the 3-D Visual TCAD simulator …

Simulation analysis of noise components in nctfet with ferroelectric layer in gate stack

A Singh, SK Sinha, S Chander - Integrated Ferroelectrics, 2023 - Taylor & Francis
Abstract Tunnel FETs (TFETs) are a strong contender for replacing conventional MOSFETs
in lower power applications due to their low off-state current and sub-threshold swing being …

Impact of Noise and Interface Trap Charge on a Heterojunction Dual-Gate Vertical TFET Device

K Nasani, B Bhowmick, PD Pukhrambam - Journal of Electronic Materials, 2024 - Springer
Herein, a vertical T-shaped heterojunction tunnel field-effect transistor (TFET) structure is
proposed. This paper explores the effect of the traps and noise on the electrical …