Colloquium: Spintronics in graphene and other two-dimensional materials

A Avsar, H Ochoa, F Guinea, B Özyilmaz… - Reviews of Modern …, 2020 - APS
After the first unequivocal demonstration of spin transport in graphene [Tombros et al.,
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …

Spintronics: Fundamentals and applications

I Žutić, J Fabian, SD Sarma - Reviews of modern physics, 2004 - APS
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …

Nuclear spin physics in quantum dots: An optical investigation

B Urbaszek, X Marie, T Amand, O Krebs, P Voisin… - Reviews of Modern …, 2013 - APS
The mesoscopic spin system formed by the 10 4–10 6 nuclear spins in a semiconductor
quantum dot offers a unique setting for the study of many-body spin physics in the …

Spin-dependent optics with metasurfaces

S Xiao, J Wang, F Liu, S Zhang, X Yin, J Li - Nanophotonics, 2017 - degruyter.com
Optical spin-Hall effect (OSHE) is a spin-dependent transportation phenomenon of light as
an analogy to its counterpart in condensed matter physics. Although being predicted and …

Spin dynamics in semiconductors

MW Wu, JH Jiang, MQ Weng - Physics Reports, 2010 - Elsevier
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions

D Paget, G Lampel, B Sapoval, VI Safarov - Physical review B, 1977 - APS
In a semiconductor, absorption of circularly polarized light (optical pumping) leads to spin-
oriented photoelectrons. In this situation, the nuclei of the crystal are dynamically polarized …

Low-temperature spin relaxation in n-type GaAs

RI Dzhioev, KV Kavokin, VL Korenev, MV Lazarev… - Physical Review B, 2002 - APS
Low-temperature electron-spin relaxation is studied by the optical orientation method in bulk
n-GaAs with donor concentrations from 10 14 cm− 3 to 5× 10 17 cm− 3. A peculiarity related …

Spin-transistor electronics: An overview and outlook

S Sugahara, J Nitta - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Spin transistors are a new concept device that unites an ordinary transistor with the useful
functions of a spin (magnetoresistive) device. They are expected to be a building block for …

Nuclei-induced frequency focusing of electron spin coherence

A Greilich, A Shabaev, DR Yakovlev, AL Efros… - Science, 2007 - science.org
The hyperfine interaction of an electron with the nuclei is considered as the primary obstacle
to coherent control of the electron spin in semiconductor quantum dots. We show, however …

Spin-orbit-mediated spin relaxation in monolayer MoS

H Ochoa, R Roldán - Physical Review B—Condensed Matter and Materials …, 2013 - APS
We study the intravalley spin-orbit-mediated spin relaxation in monolayers of MoS 2 within a
two bands effective Hamiltonian. The intrinsic spin splitting of the valence band as well as a …