The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

Being direct wide bandgap, III‐nitride (III‐N) semiconductors have many applications in
optoelectronics, including light‐emitting diodes, lasers, detectors, photocatalysis, etc …

Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …

Technological feasibility of III-nitride vertical cavity surface emitting laser (VCSEL) has been
hindered by the lack of an electrically conductive, easily manufacturable, wide reflection stop …

We demonstrate the first electrically injected nonpolar m-plane GaN-based vertical-cavity
surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing …

We demonstrate the lateral optical confinement of GaN-based vertical-cavity surface-
emitting lasers (GaN-VCSELs) with a cavity containing a curved mirror that is formed …

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green
bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including …

We have achieved continuous-wave (CW) operation of an optically polarized m-plane GaN-
based vertical-cavity surface-emitting laser (VCSEL) with an ion implanted current aperture …

The book" Nitride Semiconductor Technology" provides an overview of nitride
semiconductors and their uses in optoelectronics and power electronics devices. It explains …

We demonstrated a room-temperature continuous-wave (CW) operation of the milliwatt-
class single-mode blue and green VCSELs with epitaxially grown AlInN/GaN DBRs on c …