The quantum-well (QW) heterojunction bipolar transistor (HBT) laser the transistor laser (TL),
inherently a fast switching device, operates by transporting small minority base charge …

Developed from the authors' classroom-tested material, Semiconductor Laser Theory takes
a semiclassical approach to teaching the principles, structure, and applications of …

A single quantum well transistor laser (cavity length L= 300 μm) has been designed and
fabricated that operates with threshold I TH= 18 mA at 15 C and 14 mA at 0 C. Due to the …

Small-and large-signal analyses of transistor lasers (TLs) are demonstrated for 0.98-μm
wavelength GaInAs/GaAs and 1.3-μm AlGaInAs/InP systems. The modulation bandwidth of …

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on
the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector …

The coherent photons generated at the base quantum wells in the transistor laser (TL)
interact with the collector field and “assist” electron tunneling from the valence band of the …

A quantum well transistor laser with a base cavity length L= 300 μm has been designed,
fabricated, and operated at threshold I TH= 25 mA (0 C). As a consequence of the inherent …

We have developed the expressions for terminal currents in transistor lasers (TLs) having a
single quantum well (SQW) as well as multiple quantum wells (MQWs) of different well and …

Compared with typical diode lasers (DLs), transistor lasers (TLs) support not only current-
controlled but also voltage-controlled modulation. In this work, we theoretically investigate …

We have solved the continuity equation for electrons in the base of an InGaP–GaAs–GaAs
heterojunction bipolar transistor laser (TL) in which the position of an InGaAs quantum well …