Nanophotonic devices, composed of metals, dielectrics, or semiconductors, enable precise and high-spatial-resolution manipulation of electromagnetic waves by leveraging diverse …
Extreme ultraviolet (EUV) lithography is currently entering high-volume manufacturing to enable the continued miniaturization of semiconductor devices. The required EUV light, at …
An experimental study of laser-produced plasmas is performed by irradiating a planar tin target by laser pulses, of 4.8 ns duration, produced from a KTP-based 2-µm-wavelength …
Plasma produced from molten-tin microdroplets generates extreme ultraviolet light for state- of-the-art nanolithography. Currently, CO 2 lasers are used to drive the plasma. In the future …
We studied Extreme Ultra-Violet (EUV) emission characteristics of the 13.5 nm wavelength from CO_2 laser-irradiated pre-formed tin plasmas using 2D radiation hydrodynamic …
DK Yang, D Wang, QS Huang, Y Song, J Wu, WX Li… - Chip, 2022 - Elsevier
Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power …
DJ Hemminga, L Poirier, MM Basko… - Plasma Sources …, 2021 - iopscience.iop.org
We present the results of a joint experimental and theoretical study of plasma expansion arising from Nd: YAG laser ablation (laser wavelength λ= 1.064 μm) of tin microdroplets in …
The emission properties of tin plasmas, produced by the irradiation of preformed liquid tin targets by several-ns-long 2 µm-wavelength laser pulses, are studied in the extreme …
Extreme-ultraviolet (EUV) spectra of Sn 13+− Sn 15+ ions have been measured in an electron-beam ion trap (EBIT). A matrix inversion method is employed to unravel convoluted …