Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

Conventional GaN vertical devices, though promising for high-power applications, need
expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been …

The effects of fabrication processes on the electrical properties of Al 2 O 3/GaN structures
prepared by atomic layer deposition were investigated. The annealing process at 800 C for …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

In this study, we investigated the effects of postmetallization annealing (PMA) on the
interface properties of GaN metal–oxide–semiconductor (MOS) structures using Al 2 O 3 …

Interface characterization was carried out on Al 2 O 3/GaN structures using epitaxial n-GaN
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …

Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …