In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate …

The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

High concentrations of defects are introduced into nanoscale ZnO through non‐equilibrium
processes and resultant blue emissions are comprehensively analyzed, focusing on defect …

Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …

We report the rational synthesis of nitrogen-doped zinc oxide (ZnO: N) nanowire arrays, and
their implementation as photoanodes in photoelectrochemical (PEC) cells for hydrogen …

In the past 10years, ZnO as a semiconductor has attracted considerable attention due to its
unique properties, such as high electron mobility, wide and direct band gap and large …

ZnO is attracting considerable attention for its possible application to UV light emitters, spin
functional devices, gas sensors, transparent electronics and surface acoustic wave devices …

We investigate the p-type doping difficulty in ZnO by first-principles total-energy calculations.
The dopants being considered are group-I elements Li, Na, and K and group-V elements N …

An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused,
bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …