The germanium quantum information route
In the effort to develop disruptive quantum technologies, germanium is emerging as a
versatile material to realize devices capable of encoding, processing and transmitting …
versatile material to realize devices capable of encoding, processing and transmitting …
A crossbar network for silicon quantum dot qubits
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements
for a practical quantum computer. These include extremely long coherence times, high …
for a practical quantum computer. These include extremely long coherence times, high …
Scalable gate architecture for a one-dimensional array of semiconductor spin qubits
We demonstrate a 12-quantum-dot device fabricated on an undoped Si/SiGe heterostructure
as a proof of concept for a scalable, linear gate architecture for semiconductor quantum dots …
as a proof of concept for a scalable, linear gate architecture for semiconductor quantum dots …
[HTML][HTML] Quantum confinement in Si and Ge nanostructures: Theory and experiment
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual
interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable …
interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable …
Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs)
formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting …
formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting …
Undoped accumulation-mode Si/SiGe quantum dots
We report on a quantum dot device design that combines the low disorder properties of
undoped SiGe heterostructure materials with an overlapping gate stack in which each …
undoped SiGe heterostructure materials with an overlapping gate stack in which each …
Measurements of capacitive coupling within a quadruple-quantum-dot array
SF Neyens, ER MacQuarrie, JP Dodson, J Corrigan… - Physical Review …, 2019 - APS
We present measurements of the capacitive coupling energy and the interdot capacitances
in a linear quadruple-quantum-dot array in undoped Si/Si Ge. With the device tuned to a …
in a linear quadruple-quantum-dot array in undoped Si/Si Ge. With the device tuned to a …
Quantum computer aided design simulation and optimization of semiconductor quantum dots
X Gao, E Nielsen, RP Muller, RW Young… - Journal of Applied …, 2013 - pubs.aip.org
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling
multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed …
multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed …
Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual
interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable …
interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable …