Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Semiconductor nanowires composed of III–V materials have enormous potential to add new
functionality to electronics and optical applications. However, integration of these promising …

Advanced nanostructured materials such as organic and inorganic micro/nanostructures are
excellent building blocks for electronics, optoelectronics, sensing, and photovoltaics …

Mechanical manipulation of nanowires (NWs) for their integration in electronics is still
problematic because of their reduced dimensions, risking to produce mechanical damage to …

We describe methods of Ga droplet consumption in Ga-assisted GaAs nanowires, and their
impact on the crystal structure at the tip of nanowires. Droplets are consumed under different …

We report on a growth study of self-catalyzed GaAs nanowires based on time-resolved in
situ X-ray structure characterization during molecular-beam-epitaxy in combination with ex …

Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires
(NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si (111) substrates. NW …

An innovative deposition system has been developed to construct complex material thin
films from single-element precursors by chemical beam vapor deposition (CBVD). It relies on …

The successful synthesis of high crystalline quality and high aspect ratio GaAs nanowires
(NWs) with a uniform diameter is needed to develop advanced applications beyond the …

Growth kinetics of GaAs nanowires (NWs) on Si (111) substrates by Ga-assisted chemical
beam epitaxy is studied as a function of growth conditions such as substrate temperature (T …