Extraction of packaged GaN power transistors parasitics using S-parameters
In order to better predict the high-frequency switching operation of transistors in power
converters, parasitic elements of these devices such as resistances, inductances, and …
converters, parasitic elements of these devices such as resistances, inductances, and …
Analytical model for Schottky barrier height and threshold voltage of AlGaN/GaN HEMTs with piezoelectric effect
WE Muhea, FM Yigletu… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Physics-based models for calculating the threshold voltage (V th) of GaN-based high
electron mobility transistor (HEMT) is proposed. Assuming that the 2-D electron gas in III-V …
electron mobility transistor (HEMT) is proposed. Assuming that the 2-D electron gas in III-V …
Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths
H Mukherjee, M Kar, A Kundu - Journal of Electronic Materials, 2022 - Springer
An underlapped dual-gate (U-DG) quaternary In 0.05 Al 0.75 Ga 0.2 N/GaN metal–oxide–
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
AlN/GaN MOS-HEMTs Technology
S Taking - 2012 - theses.gla.ac.uk
The ever increasing demand for higher power devices at higher frequencies has prompted
much research recently into the aluminium nitride/gallium nitride high electron mobility …
much research recently into the aluminium nitride/gallium nitride high electron mobility …
[HTML][HTML] Development and Characterization of an Advanced Voltage-Controllable Capacitor Based on AlInGaN/GaN-Si (111) Epitaxy
H Guan, G Shen - Coatings, 2024 - mdpi.com
The AlInGaN/GaN heterojunction epitaxy material with high cutoff frequency and saturated
power density has become a very popular candidate for millimeter wave applications in next …
power density has become a very popular candidate for millimeter wave applications in next …
S-parameter characterization of gan hemt power transistors for high frequency modeling
Gallium Nitride (GaN) power devices that have been developed these recent years are ideal
candidates for high frequency power conversion, leading to a reduction of size and weight of …
candidates for high frequency power conversion, leading to a reduction of size and weight of …
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates
H Guan, L He, J Wu, Z Zeng, Y Li… - … on Electron Devices, 2022 - ieeexplore.ieee.org
A high-resistance Si-based AlInGaN/GaN heterojunction epitaxy specifying AlN/AlGaN
laminated buffer layers and AlInGaN barrier layer with 45% Al composition was successfully …
laminated buffer layers and AlInGaN barrier layer with 45% Al composition was successfully …
Impact of structural modification by spacer layer inclusion on AlGaN/GaN HEMT performance
MM Hossain, MM Hassan… - … on Information and …, 2021 - ieeexplore.ieee.org
In this paper, Performances are analyzed of an AlGaN/GaN-based High Electron Mobility
Transistor for different device structures. As the 2DEG well forms in the interface of two …
Transistor for different device structures. As the 2DEG well forms in the interface of two …
435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing
S Bouzid, H Maher, N Defrance, V Hoel, F Lecourt… - Electronics letters, 2012 - IET
A report is presented on high transconductance Gm measured on AlGaN/GaN HEMTs with a
12.5 nm-thick AlGaN barrier layer, grown on high resistivity silicon substrate using the …
12.5 nm-thick AlGaN barrier layer, grown on high resistivity silicon substrate using the …
Improvement of transconductance and gate source capacitance of Al0.27Ga0.73N/GaN HEMT at 45nm gate length with In0.1Ga0.9N back-barrier
SP Nayak, P Dutta… - 2017 Devices for Integrated …, 2017 - ieeexplore.ieee.org
An Al 0.27 Ga 0.73 N/GaN HEMT is developed at LG= 100nm gate length with In 0.1 Ga 0.9
N back-barrier. The physical insight of In 0.1 Ga 0.9 N as back-barrier and the impact of its …
N back-barrier. The physical insight of In 0.1 Ga 0.9 N as back-barrier and the impact of its …