Atomically precise manufacturing of silicon electronics

J Pitters, J Croshaw, R Achal, L Livadaru, S Ng… - ACS …, 2024 - ACS Publications
Atomically precise manufacturing (APM) is a key technique that involves the direct control of
atoms in order to manufacture products or components of products. It has been developed …

A surface code quantum computer in silicon

CD Hill, E Peretz, SJ Hile, MG House, M Fuechsle… - Science …, 2015 - science.org
The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits
in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them …

Atomic-precision advanced manufacturing for Si quantum computing

E Bussmann, RE Butera, JHG Owen, JN Randall… - MRS Bulletin, 2021 - Springer
A materials synthesis method that we call atomic-precision advanced manufacturing
(APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic …

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

P Constantinou, TJZ Stock, LT Tseng, D Kazazis… - Nature …, 2024 - nature.com
Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy
(STM) has enabled the development of single-atom, quantum-electronic devices on a …

Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor

M Koch, JG Keizer, P Pakkiam, D Keith… - Nature …, 2019 - nature.com
The realization of the surface code for topological error correction is an essential step
towards a universal quantum computer,–. For single-atom qubits in silicon,,–, the need to …

Nonlinear effects of nanoparticles: biological variability from hormetic doses, small particle sizes, and dynamic adaptive interactions

IR Bell, JA Ives, BJ Wayne - Dose-Response, 2014 - journals.sagepub.com
Researchers are increasingly focused on the nanoscale level of organization where
biological processes take place in living systems. Nanoparticles (NPs, eg, 1–100 nm …

Atomic precision advanced manufacturing for digital electronics

DR Ward, SW Schmucker, EM Anderson… - EDFA Technical …, 2020 - dl.asminternational.org
The ability to place atoms one by one at specific atomic sites was first used to create
functioning electronic devices in the late 1990s. Since then, the process known as atomic …

Effects of phosphorus doping and postgrowth laser annealing on the structural, electrical, and chemical properties of phosphorus-doped silicon films

M Lee, HY Ryu, E Ko, DH Ko - ACS Applied Electronic Materials, 2019 - ACS Publications
Phosphorus has low solubility in silicon, but nonequilibrium incorporation of phosphorus
exhibits unusual high strain and low contact resistance for advanced Si-based metal-oxide …

Suppressing segregation in highly phosphorus doped silicon monolayers

JG Keizer, S Koelling, PM Koenraad, MY Simmons - ACS nano, 2015 - ACS Publications
Sharply defined dopant profiles and low resistivity are highly desired qualities in the
microelectronic industry, and more recently, in the development of an all epitaxial Si: P …

Monolithic three-dimensional tuning of an atomically defined silicon tunnel junction

MB Donnelly, JG Keizer, Y Chung, MY Simmons - Nano Letters, 2021 - ACS Publications
A requirement for quantum information processors is the in situ tunability of the tunnel rates
and the exchange interaction energy within the device. The large energy level separation for …