[HTML][HTML] GaAsP solar cells on GaP/Si with low threading dislocation density
GaAsP on Si tandem cells represent a promising path towards achieving high efficiency
while leveraging the Si solar knowledge base and low-cost infrastructure. However …
while leveraging the Si solar knowledge base and low-cost infrastructure. However …
[HTML][HTML] Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications
Epitaxial growth of bulk InAs 1-x Sb x layer on GaAs substrate could open an opportunity for
cost-competitive long-wavelength infrared sensors. Achieving this requires a high-quality …
cost-competitive long-wavelength infrared sensors. Achieving this requires a high-quality …
Applications of electron channeling contrast imaging for the rapid characterization of extended defects in III–V/Si heterostructures
SD Carnevale, JI Deitz, JA Carlin… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
Electron channeling contrast imaging (ECCI) is a nondestructive diffraction-based scanning
electron microscopy (SEM) technique that can provide microstructural analysis similar to …
electron microscopy (SEM) technique that can provide microstructural analysis similar to …
Perspective: Fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films
High crystalline quality semiconductor materials are critical for many electronic and
optoelectronic applications. As the need grows for material bandgaps beyond those of …
optoelectronic applications. As the need grows for material bandgaps beyond those of …
Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging
KN Yaung, S Kirnstoetter, J Faucher, A Gerger… - Journal of Crystal …, 2016 - Elsevier
Accurate and rapid threading dislocation density (TDD) characterization of III–V photovoltaic
materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs …
materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs …
[HTML][HTML] Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density
We directly show that doping type strongly affects the threading dislocation density (TDD) of
relaxed GaP on Si, with n-type GaP having a TDD of∼ 3.1× 10 7 cm− 2, nearly 30× higher …
relaxed GaP on Si, with n-type GaP having a TDD of∼ 3.1× 10 7 cm− 2, nearly 30× higher …
Towards high efficiency GaAsP solar cells on (001) GaP/Si
We demonstrate metamorphic 1.66 eV GaAs 0.77 P 0.23 solar cells grown by molecular
beam epitaxy on exact (001) GaP/Si templates. Cascading such a cell with a 1.1 eV Si …
beam epitaxy on exact (001) GaP/Si templates. Cascading such a cell with a 1.1 eV Si …
Direct bandgap photoluminescence from n-type indirect GaInP alloys
This work studies Te doping effects on the direct bandgap photoluminescence (PL) of
indirect Ga_xIn_1− xP alloys (0.72≤ x≤ 0.74). The temperature-dependent PL shows that …
indirect Ga_xIn_1− xP alloys (0.72≤ x≤ 0.74). The temperature-dependent PL shows that …
Threading dislocations in MBE grown AlInSb metamorphic buffers: Revealed and counted
Y Shi, D Gosselink, VY Umansky, JL Weyher… - Journal of Vacuum …, 2017 - pubs.aip.org
The authors compare four methods to investigate the threading dislocations (TDs) observed
in metamorphic buffers used in the growth of InSb quantum well on GaAs (001) substrates …
in metamorphic buffers used in the growth of InSb quantum well on GaAs (001) substrates …
Control wafer bow of InGaP on 200 mm Si by strain engineering
When epitaxially growing III–V compound semiconductors on Si substrates the mismatch of
coefficients of thermal expansion (CTEs) between III–V and Si causes stress and wafer bow …
coefficients of thermal expansion (CTEs) between III–V and Si causes stress and wafer bow …