The basic unit of information in filamentary-based resistive switching memories is physically
stored in a conductive filament. Therefore, the overall performance of the device is …

With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …

The invention of scanning tunneling microscopy (STM), rapidly followed by atomic force
microscopy (AFM), occurred at the time when extensive research on sub-µm metal oxide …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the
effective electrical contact area, which exists between tip and sample in contact-AFM …

The electrochemical reactions triggering resistive switching in conductive-bridge resistive
random access memory (CBRAM) are spatially confined in few tens of nm3. The formation …

Wear mechanisms including fracture and plastic deformation at the nanoscale are central to
understand sliding contacts. Recently, the combination of tip-induced material erosion with …

Quantum confinement and coherence effects are considered the cause of many specific
features for systems which are generally low dimensional, strongly disordered, and/or …

After more than a decade working with graphene there is still a preoccupying lack of
commercial devices based on this wonder material. Here we report the use of high-quality …

In this letter, a tip-induced cell relying on the conductive atomic force microscope is
proposed. It is verified as a referable replica of an integrated resistive random access …